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MMBT2222A / PZT2222A — NPN General-Purpose Amplifier

MMBT2222A / PZT2222A Rev. 1.1.0

July 2014

MMBT2222A / PZT2222A

NPN General-Purpose Amplifier

Features

• This device is for use as a medium power amplifier and

switch requiring collector currents up to 500mA.

• Sourced from process 19.

Ordering Information

Absolute Maximum Ratings(1), (2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Note:

1. These rating are based on a maximum junction temperature of 150 °C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or

low-duty-cycle operation.

Figure 1. MMBT2222A Device Package Figure 2. PZT2222A Device Package

Part Number Top Mark Package Packing Method

MMBT2222A 1P SOT-23 3L Tape and Reel

PZT2222A 2222A SOT-223 4L Tape and Reel

Symbol Parameter Value Unit

VCEO Collector-Emitter Voltage 40 V

VCBO Collector-Base Voltage 75 V

VEBO Emitter-Base Voltage 6.0 V

ICCollector Current 1.0 A

TSTG Operating and Storage Junction Temperature Range -55 to 150 °C

SOT-23

Mark:1P

SOT-223

MMBT2222A / PZT2222A — NPN General-Purpose Amplifier

MMBT2222A / PZT2222A Rev. 1.1.0 2

Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Notes:

3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.

4. Device is mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm, mount ing pad for the collector lead mini mum 6 cm2.

Symbol Parameter Max. Unit

MMBT2222A(3) PZT2222A(4)

PDTotal Device Dissipation 350 1000 mW

Derate Above 25°C 2.8 8.0 mW/°C

RθJA Thermal Resistance, Junction to Ambient 357 125 °C/W

MMBT2222A / PZT2222A — NPN General-Purpose Amplifier

MMBT2222A / PZT2222A Rev. 1.1.0 3

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.

Symbol Parameter Conditions Min. Max. Unit

Off Characteristics

BV(BR)CEO Collector-Emitter Breakdown

Voltage(5) IC = 10 mA, IB = 0 40 V

BV(BR)CBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 75 V

BV(BR)EBO Emitter-Base Breakd own Voltage IE = 10 μA, IC = 0 6.0 V

ICEX Collector Cut-Off Current VCE = 60 V, VEB(off) = 3.0 V 10 nA

ICBO Collector Cut-Off Current VCB = 60 V, IE = 0 0.01 μA

VCB = 60 V, IE = 0, TA = 125°C10

IEBO Emitter Cut-Off Current VEB = 3.0 V, IC = 0 10 nA

IBL Base Cut-Off Current VCE = 60 V, VEB(off) = 3.0 V 20 nA

On Characteristics

hFE DC Current Gain

IC = 0.1 mA, VCE = 10 V 35

IC = 1.0 mA, VCE = 10 V 50

IC = 10 mA, VCE = 10 V 75

IC = 10 mA, VCE = 10 V,

TA = -55°C35

IC = 150 mA, VCE = 10 V(5) 100 300

IC = 150 mA, VCE = 1 V(5) 50

IC = 500 mA, VCE = 10 V(5) 40

VCE(sat) Collector-Emitter Saturation Voltage(5) IC = 150 mA, IB = 15 mA 0.3 V

IC = 500 mA, IB = 50 mA 1.0

VBE(sat) Base-Emi tter Satu rati on Voltage(5) IC = 150 mA, IB = 15 mA 0.6 1.2 V

IC = 500 mA, IB = 50 mA 2.0

Small Signal Characteristics

fTCurrent Gain Bandwidth Product IC = 20 mA, VCE = 20 V,

f = 100 MHz 300 MHz

Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 8.0 pF

Cibo Input Capaci tance VEB = 0.5 V, IC = 0, f = 1 MHz 25 pF

rb’CcCollector Base Time Constant IC = 20 mA, VCB = 20 V,

f = 31.8 MHz 150 pS

NF Noise Figure IC = 100 μA, VCE = 10 V,

RS = 1.0 kΩ, f = 1.0 kHz 4.0 dB

Re(hie)Real Part of Common-Emitter

High Frequency Input Impedance IC = 20 mA, VCE = 20 V,

f = 300 MHz 60 Ω

Switching Characteristics

tdDelay Time VCC = 30 V, VEB(off) = 0.5 V,

IC = 150 mA, IB1 = 15 mA 10 ns

trRise Time 25 ns

tsStorage Time VCC = 30 V, IC = 150 mA,

IB1 = IB2 = 15 mA 225 ns

tfFall Time 60 ns

MMBT2222A / PZT2222A — NPN General-Purpose Amplifier

MMBT2222A / PZT2222A Rev. 1.1.0 4

Typical Performance Characteristics

Figure 3. Typical Pulsed Current Gain

vs. Collector Current Figure 4. Collector-Emitter Saturation Voltage

vs. Collector Current

Figure 5. Base-Emitte r Saturation Voltage

vs. Collector Current Figure 6. Base-Emitter On Voltage

vs. Collector Current

Figure 7. Collector Cut-Off Current

vs. Ambient Temperature Figure 8. Emitter Transition and Output Capacitance

vs. Reverse Bias Voltage

0.1 0.3 1 3 10 30 100 300

100

200

300

400

500

I - COLLECTOR CURRENT (mA)

h - TYPICAL PULSED CURRENT GAIN

125 °C

25 °C

- 40 °C

V = 5V

1 10 100 500

0.1

0.2

0.3

0.4

I - COLLECTOR CURRENT (mA)

V - COLLECTOR-EMITTER VOLTAGE (V)

CESAT

25 㿐

E= 10

125 㿐

- 40 㿐

1 10 100 500

0.4

0.6

0.8

I - COLLECTOR CURRENT (mA)

V - BASE-EMITTER VOLTAGE (V)

BESAT

E= 10

25 㿐

125 㿐

- 40 㿐

0.1 1 10 25

0.2

0.4

0.6

0.8

I - COLLECTOR CURRENT (mA)

V - BASE-EMITTER ON VOLTAGE (V)

BE (ON)

V = 5V

25 °C

125 °C

- 40 °C

25 50 75 100 125 150

0.1

100

500

T - AMBIENT TEMPERATURE ( C)

I - COLLECTOR CURRENT (nA)

V = 40V

CBO

0.1 1 10 100

REVERSE BIAS VOLTAGE (V)

CAPACITANCE (pF)

f = 1 MHz

Cob

Cte

MMBT2222A / PZT2222A — NPN General-Purpose Amplifier

MMBT2222A / PZT2222A Rev. 1.1.0 5

Typical Performance Characteristics (Continued)

Figure 9. Turn-On and Turn-Off Times

vs. Collector Current Figure 10. Switching Times vs. Collector Current

Figure 11. Power Dissipation vs.

Ambient Temperature Figure 12. Common Emitter Characteristics

Figure 13. Common Emitter Characteristics Figure 14. Common Emitter Characteristics

10 100 1000

160

240

320

400

I - COLLECTOR CURRENT (mA)

TIME (nS)

I = I =

ton

off

V = 25 V

10 100 1000

160

240

320

400

I - COLLECTOR CURRENT (mA)

TIME (nS)

I = I =

V = 25 V

0 25 50 75 100 125 150

0.25

0.5

0.75

TEMPERATURE ( C)

P - POWER DISSIPATION (W)

SOT-223

TO-92

SOT-23

0 102030405060

I - COLLECTOR CURRENT (mA)

CHAR. RELATIVE TO VALUES AT I = 10mA

V = 10 V

T = 25 C

0 20406080100

0.4

0.8

1.2

1.6

2.4

T - AMBIENT TEMPERATURE ( C)

CHAR. RELATIVE TO VALUES AT T = 25 C

V = 10 V

I = 10 mA

hoe

hre

hfe

hie

0 5 10 15 20 25 30 35

0.75

0.8

0.85

0.9

0.95

1.05

1.1

1.15

1.2

1.25

1.3

V - COLLECTOR VOLTAGE (V)

CHAR. RELATIVE TO VALUES AT V = 10V

T = 25 C

A o

hoe

h re

h fe

h ie

I = 10 mA

MMBT2222A / PZT2222A — NPN General-Purpose Amplifier

MMBT2222A / PZT2222A Rev. 1.1.0 6

Physical Dimensions

Figure 15. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notic e. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor represe ntative to verify or

obtain the most recent revision. Package specifica tions do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the

warranty therein, which covers Fairchild produ cts.

Always visit Fairchild Semiconduct or’s online packaging are a for the most recent package drawings :

http://www.fairchildsemi.com/dwg/MA/MA03D.pdf.

For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:

http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf.

LAND PATTERN

RECOMMENDATION

NOTES: UNLESS OTHERWISE SPECIFIED

A) REFERENCE JEDEC REGISTRATION

TO-236, VARIATION AB, ISSUE H.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS ARE INCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR EXTRUSIONS.

D) DIMENSIONING AND TOLERANCING PER

ASME Y14.5M - 1994.

E) DRAWING FILE NAME: MA03DREV10

SEE DETAIL A

SEATING

PLANE

SCALE: 2X

GAGE PLANE

(0.55)

(0.93)

1.20 MAX

0.10

0.00

0.10 C

2.40±0.30

2.92±0.20

1.30+0.20

-0.15

0.60

0.37

0.20 A B

1.90

0.95

(0.29)

0.95

1.40

2.20

1.00

1.90

0.25

0.23

0.08

0.20 MIN

MMBT2222A / PZT2222A — NPN General-Purpose Amplifier

MMBT2222A / PZT2222A Rev. 1.1.0 7

Physical Dimensions (Continued)

Figure 16. MOLDED PACKAGING, SOT-223, 4-LEAD (ACTIVE)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notic e. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor represe ntative to verify or

obtain the most recent revision. Package specifica tions do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the

warranty therein, which covers Fairchild produ cts.

Always visit Fairchild Semiconduct or’s online packaging are a for the most recent package drawings :

http://www.fairchildsemi.com/dwg/MA/MA04A.pdf.

For current tape an d reel specifications, visit Fair child Semiconductor’s online pac kaging area:

http://www.fairchildsemi.com/packing_dwg/PKG-MA04A_BK.pdf.

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