THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max 1.67
70
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25oC unlessotherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEX Collector Cut-off
Current (VBE =-1.5V) for 2N6487/2N6490 VCE =65V
for 2N6488 VCE =85V
T
c=150o
C
for 2N6487/2N6490 VCE =60V
for 2N6488 VCE =80V
0.5
0.5
5
5
mA
mA
mA
mA
ICER Collector Cut-off
Current (RBE =100Ω)for 2N6487/2N6490 VCE =55V
for 2N6488 VCE =75V 0.5
0.5 mA
mA
ICEO Collector Cut-off
Current (IB=0) for 2N6487/2N6490 VCE =30V
for 2N6488 VCE =40V 1
1mA
mA
IEBO Emitter Cut-off Current
(IC=0) V
EB =5V 1 mA
V
CEO(sus)∗Collector-Emitter
Sustaining Voltage IC=200mA
for 2N6487/2N6490
for 2N6488 60
80 V
V
VCER(sus)∗Collector-Emitter
Sustaining Voltage
(RBE =100Ω)
I
C=200mA
for 2N6487/2N6490
for 2N6488 65
85 V
V
VCEX(sus)∗Collector-Emitter
Sustaining Voltage
(VBE=-1.5V, RBE=100Ω)
IC=200mA
for 2N6487/2N6490
for 2N6488 70
90 V
V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC=5A I
B=0.5A
I
C=15A I
B=5A 1.3
3.5 V
V
VBE∗Base-Emitter Voltage IC=5A V
CE =4V
I
C=15A V
CE =4V 1.3
3.5 V
V
hFE∗DC Current Gain IC=5A V
CE =4V
I
C=15A V
CE =4V 20
5150
hfe Small Signal Current
Gain IC=1A V
CE =4V f=1MHz
I
C=1A V
CE =4V f=1KHz 5
25
∗
Pulsed: Pulse duration = 300 µs, duty cycle1.5 %
For PNP types voltage and current values are negative.
2N6487 / 2N6488/ 2N6490
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