AUTOMOTIVE GRADE AUIRFR1010Z Features Advanced Process Technology Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET(R) Power MOSFET VDSS 55V RDS(on) typ. 5.8m max. 7.5m ID (Silicon Limited) 91A ID (Package Limited) 42A D Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Base part number D-Pak S D-Pak AUIRFR1010Z G Gate D Drain Standard Pack Form Quantity Tube 75 Tape and Reel Left 3000 Package Type AUIRFR1010Z G S Source Orderable Part Number AUIRFR1010Z AUIRFR1010ZTRL Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 91 ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) 65 ID @ TC = 25C IDM PD @TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation 42 360 140 VGS EAS EAS (Tested) IAR EAR TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol RJC RJA RJA Parameter Junction-to-Case Junction-to-Ambient ( PCB Mount) Junction-to-Ambient Units A W 0.9 20 110 220 See Fig.15,16, 12a, 12b W/C V mJ A mJ -55 to + 175 C 300 Typ. Max. Units --- --- --- 1.11 50 110 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-11-19 AUIRFR1010Z Static @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 55 --- --- V VGS = 0V, ID = 250A --- 0.051 --- V/C Reference to 25C, ID = 1mA --- 5.8 7.5 m VGS = 10V, ID = 42A 2.0 --- 4.0 V VDS = VGS, ID = 100A 31 --- --- S VDS = 25V, ID = 42A --- --- 20 VDS = 55 V, VGS = 0V A --- --- 250 VDS = 55V,VGS = 0V,TJ =125C --- --- 200 VGS = 20V nA --- --- -200 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time --- --- --- --- --- --- --- 63 17 23 17 76 42 48 95 --- --- --- --- --- --- LD Internal Drain Inductance --- 4.5 --- LS Internal Source Inductance --- 7.5 --- --- --- --- --- --- --- 2840 470 250 1630 360 560 --- --- --- --- --- --- Min. Typ. Max. Units --- --- 42 --- --- 360 --- --- --- --- 24 20 1.3 36 30 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Output Capacitance Coss Effective Output Capacitance Coss eff. Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage Reverse Recovery Time trr Qrr Reverse Recovery Charge ton Forward Turn-On Time ID = 42A nC VDS = 44V VGS = 10V VDD = 28V ID = 42A ns RG = 7.6 VGS = 10V Between lead, 6mm (0.25in.) nH from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz pF VGS = 0V, VDS = 1.0V = 1.0MHz VGS = 0V, VDS = 44V = 1.0MHz VGS = 0V, VDS = 0V to 44V Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = 42A,VGS = 0V ns TJ = 25C ,IF = 42A, VDD = 28V nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Limited by TJmax , starting TJ = 25C, L = 0.13mH, RG = 25, IAS = 42A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. 100% tested to this value in production. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 R is measured at TJ approximately 90C 2 2015-11-19 AUIRFR1010Z 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10 4.5V 1 0.1 100 BOTTOM 4.5V 10 60s PULSE WIDTH 60s PULSE WIDTH Tj = 25C 1 Tj = 175C 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 10 100 Fig. 2 Typical Output Characteristics 120 Gfs , Forward Transconductance (S) 1000 ID, Drain-to-Source Current) 1 VDS, Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics 100 TJ = 175C 10 TJ = 25C 1 VDS = 25V 2 4 6 8 TJ = 25C 100 80 TJ = 175C 60 40 20 VDS = 10V 380s PULSE WIDTH 60s PULSE WIDTH 0.1 0 10 VGS, Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 0 20 40 60 80 100 ID,Drain-to-Source Current (A) Fig. 4 Typical Forward Trans conductance Vs. Drain Current 2015-11-19 AUIRFR1010Z 5000 VGS, Gate-to-Source Voltage (V) 4000 C, Capacitance(pF) 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 3000 2000 Coss 1000 ID= 42A VDS = 44V 16 VDS= 28V VDS= 11V 12 8 4 Crss 0 0 1 10 0 100 Fig 5. Typical Capacitance vs. Drain-to-Source Voltage ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) TJ = 175C 10.00 1.00 0.10 TJ = 25C Fig. 7 Typical Source-to-Drain Diode Forward Voltage 100 1000 100 100sec 10 1msec 10msec 1 Tc = 25C Tj = 175C Single Pulse DC 0.1 VSD , Source-to-Drain Voltage (V) 80 OPERATION IN THIS AREA LIMITED BY R DS (on) VGS = 0V 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 4 60 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 10000 100.00 40 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 1000.00 20 1 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 2015-11-19 AUIRFR1010Z 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) 100 LIMITED BY PACKAGE ID , Drain Current (A) 80 60 40 20 ID = 42A VGS = 10V 2.0 1.5 1.0 0.5 0 25 50 75 100 125 150 -60 -40 -20 175 0 20 40 60 80 100 120 140 160 180 TC , Case Temperature (C) TJ , Junction Temperature (C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Normalized On-Resistance Vs. Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 J 0.05 0.02 0.01 0.01 R1 R1 J 1 R2 R2 R3 R3 C 1 2 3 2 3 Ci= iRi Ci= iRi C Ri (C/W) i (sec) 0.3854 0.000251 0.3138 0.001092 0.4102 0.015307 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2015-11-19 AUIRFR1010Z 15V + V - DD IAS 20V 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A EAS, Single Pulse Avalanche Energy (mJ) D.U.T RG 500 DRIVER L VDS ID 7.6A 11A BOTTOM 42A TOP 400 300 200 100 0 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (C) Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms 4.0 Id Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 13a. Gate Charge Waveform VGS(th) Gate threshold Voltage (V) Vds ID = 1.0mA 3.5 ID = 250A ID = 100A 3.0 2.5 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( C ) Fig 14. Threshold Voltage Vs. Temperature Fig 13b. Gate Charge Test Circuit 6 2015-11-19 AUIRFR1010Z 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses 0.01 0.05 10 0.10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs. Pulse width Notes on Repetitive Avalanche Curves , Figures 15, 16: EAR , Avalanche Energy (mJ) 120 (For further info, see AN-1005 at www.infineon.com) TOP Single Pulse BOTTOM 1% Duty Cycle ID = 42A 100 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 80 60 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 40 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 20 0 25 50 75 100 125 150 175 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) Starting TJ , Junction Temperature (C) PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC Iav = 2T/ [1.3*BV*Zth] Fig 16. Maximum Avalanche Energy Vs. Temperature 7 EAS (AR) = PD (ave)*tav 2015-11-19 AUIRFR1010Z Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Fig 18a. Switching Time Test Circuit 8 Fig 18b. Switching Time Waveforms 2015-11-19 AUIRFR1010Z D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches)) D-Pak (TO-252AA) Part Marking Information Part Number AUFR1010Z YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-11-19 AUIRFR1010Z D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 2015-11-19 AUIRFR1010Z Qualification Information Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-Pak MSL1 Class M4 (+/- 700V) AEC-Q101-002 Class H1C (+/- 1500V) AEC-Q101-001 Class C5 (+/- 2000V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 11/19/2015 Comments Updated datasheet with corporate template Corrected ordering table on page 1. Corrected RthJA (PCB mount) typo from "40C/W" to "50C/W" on page 1. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. 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