DXO = This series of N-Channel Enhancement-mode Power ReMOS [F FIELD EFFECT POWER TRANSISTOR = If IRF642,643 16 AMPERES 200, 150 VOLTS RDS(ON) = 0.22 2. MOSFETs utilizes GEs advanced Power DMOS technology N-CHANNEL 5 to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance G in most switching applications including: switching power s supplies, inverters, converters and solenoid/relay drivers. on GASE STYLE TO-220AB Also, the extended safe operating area with good linear 40411026) 118288 sgoia.es transfer characteristics makes it well suited for many linear "380(8.65) 4") 7 oa 2 fe 9551.98 applications such as audio amplifiers and servo motors. omtm| FE Features Ve OT A ai Polysilicon gate Improved stability and reliability 1451968. + Hee 28 F, e No secondary breakdown Excellent ruggedness | 4 \ t + -130(3.3) 4 he = e Ultra-fast switching Independent of temperature Al = | ee . TERM.1 . -500(12.7}MIN. e Voltage controlled High transconductance TERM2 pg6i1.39 e Low input capacitance Reduced drive requirement TERMS _ Z cae . 933(0,84 .108(2.67 4 .107(2.72) e Excellent thermal stability Ease of paralleling 6 7a | iat (at) 8772.21) 9561.98) _ co 1016 3 eae) UNIT TYPE |TERM.1TERM.2| TERM. TAR POWER MOS FET|T0-220-AB] GATE |DRAIN| SOURCE| DRAIN maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF642 IRF643 UNITS Drain-Source Voltage Vpss 200 150 Volts Drain-Gate Voltage, Ras = 1M VpGR 200 150 Volts Continuous Drain Current g To= 26C ID 16 16 A To = 100C 10 10 A Pulsed Drain Current lom 64 64 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ To = 25C Pp 125 125 Watts Derate Above 25C 1.0 1.0 w/C Operating and Storage Junction Temperature Range Ty, Tste -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rec 1.00 1.00 C/W Thermal Resistance, Junction to Ambient Rasa 80 80 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 203 electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC [SYMBOL | MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRF642 BVpss 200 _ _ Volts (Vag = OV, Ip = 250 pA) IRF643 150 _ Zero Gate Voltage Drain Current loss (Vps = Max Rating, Vas = OV, To = 25C) _ _ 250 uA (Vps = Max Rating, x 0.8, Veg = OV, Tc = 125C) = ~ 1000 Gate-Source Leakage Current on characteristics Gate Threshold Voltage To = 25C | VascTH) | 2.0 _ 4.0 Volts (Vos = Ves, Ip = 250 uA) On-State Drain Current { 16 _ _ A (Vag = 10V, Vos = 10V) D(ON) Static Drain-Source On-State Resistance _ (Vas = 10V, Ip = 10A) Rps(on) 0.18 0.22 Ohms Forward Transconductance _ (Vps = 10V, Ip = 10A) Gfs 4.8 6.0 mhos dynamic characteristics Input Capacitance Vas = 10V Ciss _ 1400 1600 pF Output Capacitance Vps = 25V Coss _ 310 750 pF Reverse Transfer Capacitance = 1MHz Crss _ 65 300 pF switching characteristics Turn-on Delay Time Vos = 90V ta(on) _ 20 _ ns Rise Time Ip = OA, Vag = 15V tr 40 ns Turn-off Delay Time Reen = 500, Rag = 12.50 | taoff) _ 60 _ ns Fall Time (Ras (Equiv.) = 100) tt _ 30 _ ns source-drain diode ratings and characteristics* Continuous Source Current Is _ _ 16 A Pulsed Source Current ism _ _ 64 A Diode Forward Voltage _ (To = 25C, V@g = 10V, Ig = 16A) Vsp 1.0 19 Volts Reverse Recovery Time ter _ 330 _ ns (Ig = 18A, dlg/dt = 100A/ysec, To = 125C) Qrr 3.5 uC *Pulse Test: Pulse width < 300 us, duty cycle = 2% 800 gs 8 Ip, ORAIN CURRENT (AMPERES) OPERATION IN THIS AREA MAY BE LIMITED BY Ragin) | | SINGLE PULSE To = 28C 1 2 4 6 810 20 40 60 80100 Vig. ORAINSOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 200 400 600 1000 204 2.4 CONDITIONS: Figg(on) CONDITIONS: Ip = 10 A, Vgg = 10V 2.2 Rosiony 2.0 Vgg(TH) CONDITIONS: Ip = 250uA, Vpg = Veg 1.8 1.6 1.4 1.2 1.0 08 Vesity) 06 Rosiony AND Veggcrny NORMALIZED 0.4 0.2 0 40 0 40 80 T,, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Roygioy; AND Vagiru) VS. TEMP. 120 160