Transys Electronics L I M I T E D SOT-523 2N7002T MOSFET Plastic-Encapsulated Transistors SOT-523 ( N-Channel ) FEATURES Power dissipation 1. GATE PD: 0.15 W (Tamb=25) 2. SOURCE 3. DRAIN Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range TJ,Tstg: -55 to +150 Marking: 72 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless Test otherwise conditions specified) MIN TYP MAX VGS=0V,ID=10A 60 Vth(GS) VDS=VGS, ID=250A 1 Gate-body Leakage* lGSS VDS=0V, VGS=20V 10 VDS=60V, VGS=0V 1 Zero Gate Voltage Drain Current * IDSS Drain-Source Breakdown Voltage Gate-Threshold Voltage* On-state Drain Current * V(BR)DSS ID(ON) * RDS(0n) Drain-Source On-Resistance * VGS=10V, VDS=7.5V 500 1000 mA 3.2 7.5 VGS=10V, ID=500mA 4.4 13.5 Input Capacitance CiSS VDS=25V, VGS=0V Output Capacitance COSS Reverse Transfer Capacitance CrSS nA 500 VGS=5V, ID=50mA VDS=10V, ID=200mA * V A VDS=60V,VGS=0V,Tj=125 gFS Forward Tran conductance 2 UNIT 80 ms 22 50 11 25 2 5 f=1MHz pF SWITCHING Turn-on Time TD(ON) Turn-off Time TD(OFF) * Pulse test. VDD=30V,RL=150 ID=200mA,VGEN=10V RGEN=25 7 20 11 20 ns Typical Characteristics 2N7002T