SOT-523 Plastic-Encapsulated Transistors
2N7002T MOSFET ( N-Channel )
FEATURES
Power dissipation
P
D: 0.15 W (Tamb=25℃)
Collector current
I
D: 115 mA
Collector-base voltage
V
DS: 60 V
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
Marking: 72
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Drain-Source Breakdown Voltage * V(BR)DSS V
GS=0V,ID=10µA 60
Gate-Threshold Voltage* Vth(GS) V
DS=VGS, ID=250µA 1 2
V
Gate-body Leakage* lGSS V
DS=0V, VGS=±20V ±10 nA
VDS=60V, VGS=0V 1
Zero Gate Voltage Drain Current * IDSS
VDS=60V,VGS=0V,Tj=125℃ 500
µA
On-state Drain Current * ID(ON) V
GS=10V, VDS=7.5V 500 1000 mA
VGS=5V, ID=50mA 3.2 7.5
Drain-Source On-Resistance * RDS(0n) VGS=10V, ID=500mA 4.4 13.5
Ω
Forward Tran conductance * gFS V
DS=10V, ID=200mA 80 ms
Input Capacitance CiSS 22 50
Output Capacitance COSS 11 25
Reverse Transfer Capacitance CrSS
VDS=25V, VGS=0V
f=1MHz 2 5
pF
SWITCHING
Turn-on Time TD(ON) 7 20
Turn-off Time TD(OFF)
VDD=30V,RL=150
ID=200mA,VGEN=10V
RGEN=25Ω 11 20
ns
* Pulse test.
SOT-523
1. GATE
2. SOURCE
3. DRAIN
Transys
Electronics
LI
M
ITE
D
Typical Characteristics 2N7002T
