VN2222LLRLRA - ON Semiconductor

April, 2011 − Rev. 4

1Publication Order Number:

VN2222LL/D

VN2222LLG

Small Signal MOSFET

150 mAmps, 60 Volts

N−Channel TO−92

Features

•This is a Pb−Free Device*

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain−Source Voltage VDSS 60 Vdc

Drain−Gate Voltage (RGS = 1.0 MW)VDGR 60 Vdc

Gate−Source Voltage

− Continuous

− Non−repetitive (tp ≤ 50 ms)

VGS

VGSM

±20

±40

Vdc

Vpk

Drain Current

− Continuous

− Pulsed

IDM

150

1000

mAdc

Total Power Dissipation @ TA = 25°C

Derate above 25°C

PD400

3.2

mW/°C

Operating and Storage Temperature Range TJ, Tstg −55 to

+150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient RqJA 312.5 °C/W

Maximum Lead Temperature for

Soldering Purposes, 1/16″ from case

for 10 seconds

TL300 °C

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

VN22

22LL

AYWW G

TO−92

CASE 29

STYLE 22

N−Channel

123

Source

Drain

Gate

150 mA, 60 V

RDS(on) = 7.5 W

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

MARKING DIAGRAM

& PIN ASSIGNMENT

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(Note: Microdot may be in either location)

VN2222LLG

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(VGS = 0, ID = 100 mAdc)

V(BR)DSS 60 −Vdc

Zero Gate Voltage Drain Current

(VDS = 48 Vdc, VGS = 0)

(VDS = 48 Vdc, VGS = 0, TJ = 125°C)

IDSS

−

500

mAdc

Gate−Body Leakage Current, Forward

(VGSF = 30 Vdc, VDS = 0)

IGSSF − −100 nAdc

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage

(VDS = VGS, ID = 1.0 mAdc)

VGS(th) 0.6 2.5 Vdc

Static Drain−Source On−Resistance

(VGS = 10 Vdc, ID = 0.5 Adc)

(VGS = 10 Vdc, ID = 0.5 Vdc, TC = 125°C)

rDS(on)

−

7.5

13.5

Drain−Source On−Voltage

(VGS = 5.0 Vdc, ID = 200 mAdc)

(VGS = 10 Vdc, ID = 500 mAdc)

VDS(on) −

−1.5

3.75

Vdc

On−State Drain Current

(VGS = 10 Vdc, VDS ≥ 2.0 VDS(on))

ID(on) 750 −mA

Forward Transconductance

(VDS = 10 Vdc, ID = 500 mAdc)

gfs 100 −mmhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0,

f = 1.0 MHz)

Ciss −60 pF

Output Capacitance Coss −25

Reverse Transfer Capacitance Crss −5.0

SWITCHING CHARACTERISTICS (Note 1)

Turn−On Delay Time (VDD = 15 Vdc, ID = 600 mA,

Rgen = 25 W, RL = 23 W)

ton −10 ns

Turn−Off Delay Time toff −10

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

ORDERING INFORMATION

Device Package Shipping†

VN2222LLG TO−92

(Pb−Free)

1000 Unit / Box

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

VN2222LLG

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ID, DRAIN CURRENT (AMPS)

VDS, DRAIN-SOURCE VOLTAGE (VOLTS)

0.6

0.4

0.2

0.8

1.2

012345

1.6

1.4

678910

Figure 1. Ohmic Region

VGS, GATE-SOURCE VOLTAGE (VOLTS)

012345678

910

1.8

0.6

0.4

0.2

0.8

T, TEMPERATURE (°C) T, TEMPERATURE (°C)

0.4

0.8

0.6

1.2

1.6

1.4

, STATIC DRAIN-SOURCE ON-RESISTANCE

DS(on)

-60 -20 +20

1.8

+60 +100 +140

2.2

2.4

-60 -20 0 +20 +60 +100 +140

0.7

0.85

0.8

0.75

0.9

0.95

1.1

1.05

1.15

1.2

(NORMALIZED)

, THRESHOLD VOLTAGE (NORMALIZED)

GS(th)

Figure 2. Transfer Characteristics

Figure 3. Temperature versus Static

Drain−Source On−Resistance

Figure 4. Temperature versus Gate

Threshold Voltage

TA = 25°C

VGS = 10 V

9 V

8 V

7 V

6 V

5 V

4 V

3 V

VDS = 10 V 25°C

125°C

-55°C

VGS = 10 V

ID = 200 mA

VDS = VGS

ID = 1 mA

VN2222LLG

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PACKAGE DIMENSIONS

STYLE 22:

PIN 1. SOURCE

2. GATE

3. DRAIN

TO−92

CASE 29−11

ISSUE AM

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 --- 12.70 ---

L0.250 --- 6.35 ---

N0.080 0.105 2.04 2.66

P--- 0.100 --- 2.54

R0.115 --- 2.93 ---

V0.135 --- 3.43 ---

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. CONTOUR OF PACKAGE BEYOND

DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P

AND BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX

MILLIMETERS

A4.45 5.20

B4.32 5.33

C3.18 4.19

D0.40 0.54

G2.40 2.80

J0.39 0.50

K12.70 ---

N2.04 2.66

P1.50 4.00

R2.93 ---

V3.43 ---

STRAIGHT LEAD

BULK PACK

BENT LEAD

TAPE & REEL

AMMO PACK

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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VN2222LL/D

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