2N2918 - Motorola / Freescale Semiconductor

DUAL NPN SILICON ANNULAR*TRANSISTORS e

...especially designed for low-level, low-noise @

differential amplifier applications. e

sHigh Breakdown Voltage

BVCEO=70 Vdc typical

oVery High Beta Guaranteed

sBeta Match as tight as 0.9 to 1,.$:>.

,.,p~ ..*.

oas low as 3.0 db max at f=1 kc

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ABSOLUTE MMIMUM RATINGS (TAeq~~{f@\eSS otherwise noted)

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.. ,. ,...

J,+‘~z~~%$‘

.x>,$,j\, Rating

Characteristics ~&291 3-]8 2N2919-20 Unit

2N2972-77 2N2978-79

Collector-Base Voltage 45 60 Vdc

Collector-Emitter Voltage 45 60 Vdc

.+.

Emitter-Base Voltige w’:) VEBO 6

.>“t:~p$,~~ Vdc

---

DC Collector Curre~.. ‘$, ~,~:r.. lC 30 mAdc

.!1. ‘I’\$>&.,

~f’i..

.,i$,,

Jmction Temp~fa@)e/,* ‘J +200 ‘c

\..,,., !...,

,,,,,..,(,~:,\

Storage Te#per~&Te ~nge T-65 to +200

Stg “c

\,J, ,...

?V‘!$.‘“<*?8-’

,...~.&::-...

‘*Ji\,..~..l:~$ ONE SIDE BOTH SIDES

s,.<}.

To/$f~yYce Dissipation @TA= 25° CPD

>\,,...

TO?$ Case 300 600 mW

Derate above 25° C1.7 3.4 mW/OC

TO-18 Case 250 300 mW

Derate above 25° C1.43 1.72 mW/OC

Total Device Dissipation @Tc= 250CPD

TO-5 Case 750 1500 mW

Derate above 25° C4.3 8.6 mW/OC

TO-18 Case 500 750 mW

Derate above 25° C2.85 4.3 mW~ C

mPatents pending

6-LEAD TO-18

2;::;2

2N2979

:+ 6

20 10

6-LEAD TO-5

2;:; ;3

2N2920

‘5

+0 6

20 10

Pin Connections, Bottom View

All Leads Electrically Isolated From Case

TO-18 TYPE TO-5 TYPE

2N2972-79 2N2913-20

ASUBSIDIARY OF MOTOROLA INC.

ELECTRICAL CHARACTERISTICS (At T.= 25° Cunless otherwise noted)

Characteristics ISvmhnl IM. Ir.” IMa. IIInit

_,...--, ...... .Jr ,.,”- -,,, ,

Collector -Base Breakdown Volhge

(IC =10 pAdc, IE =O) 2N2913 thru 2N2918, 2N2972 tiru 2N2977 BVCBO .,,@& ...

~.~’:*8.$.>:,:;,,,

45 — —

2N2919, 2N2920, 2N2978, 2N2979 60 90 —,:: ~~:&*:3t. ~

Collector-Emitter Wstaining Voltige ,.~

‘~+\

(IC =10 mAdc, ~ = O) BVCEO(SUS) ‘fi$,q ~,:,,,,?~dc

2N2913, tkru 2N2918, 2N2972 thru 2N2977 45 —,*>=W$

2N2919, 2N2920, 2N2978, 2N2979 60 70 ,;,,:*” *

,N~

Emitter-Base Breakdown Vol&ge

(IE =10 pAdc, Ic =O) *$! ,+4 ‘~?(’~’

All ~es BVEBO ..C.c$: Vdc

6p,;k ,g” _

,.,,\i~*i:f!i.

b“v

Collector-Base Cutoff Current .:,

,. .*

(vcB =45 Vdc, IE =O) lCBO $?,!+>{,l,X’

2N2913 thru 18, 2N2972 thru 77 PAdc

&..- 0.010

2N2919, 2N2920, 2N2978, 2N2979 0.002

(VCB =45 Vdc, IE =O, TA =150”C) All ~es 10

Collector-Emitter Cutoff Current

(VCE =5Vdc, ~ = O) All ~pes PAdc

0,002

Emitter-Base Cutoff Current

(vEB =5Vdc, Ic =O) All Types pAdc

—_0.002

Collector -Emitter Saturation Voltxge

(Ic =1mAd., ~ = 0.1 mAdc) All Types Vdc

— — 0.35

Base-Emitter ~,ON,~ Volhge .!,

,i!t~ ~.,::.::? ~VBE(ON) __

D!C:::I:;*VCE =’vdc)

,. Vdc

.;>,~<)~r.,.

All Types ,.,,, ~$$.*, 0,7

t.i~j,.,

(Ic =10 yAdc, VCE =5Vdc) .F~\\/itL

2N2913, 15, 17, 19, 2N2972, 74, 7&?9~~ ‘FE

2N2914, 16, 18, 20, 2N2973, 75, ~~, ‘~, “$~: 60 —240 —

150 —600

(Ic =10 uAdc, VCE =5Vdc, TA =-55°C) 2N2913, 16, 17, 19, 2N2972, 7~\,~,~# 15 — —

2N2914, 16, 18, 20, 2N297%$~,&<:$J/ ~g 30 — —

(Ic =100 &Adc, VCE =5Vdc) 2N2913, 15, 17, 19, 2N2972, “~, ‘?6, 78 100 — —

2N2914, 16, 18, 20, 2N297~ 75,’ 77, 79 225 — —

(Ic =1mAdc, VCE =5Vdc) .J:s

2N2913, 15, 17, l~$:$N29?2, 74, 76, 7e

2N2914, 16, 18{+S~~!&Z973, 75, 77, 79 150 — —

}\. .300 — —

00tput Capacitance ,:.ir$$t$?;>~)::k

(vcB =5Vdc, IE =O, f=140 kc) ?Q>t *, c

All TyPeS$? obo 4pf

—

\-*: 6

~,.**~,;,

High Frequency Current &in ,::,W

<:,. , .

~i,.,::<,,,,:”,’ Ihfel

(Ic =500 PA, VCE =5V, f=20 mc) Al&tT&<,\ .—

3.0 — —

J::,*t,..,,.?>.,.

kput hpedance *i.Jea‘* \\,’‘~

(Ic=l.OmA, VcB=5V, f=lkc) hib

t, Alit$ypes ohms

~NtG+.:,,;: 25 28

,,,: 32

@tput Atiithnce ,::

(Ic=l. OmA, VcB=5V, f=lkc) ,,$~$,,M$All Types hob @mhos

,* — — 1.0

Noise Fi@re *:<:tx ‘:..,’

(Ic =10 MA, VCE =5V, RG =l~~w~’”~ NF db

f=1kc$~~~= 200 CPS 2N2914, 16, 18, 20, 73, 75, 77, 79 —

.. 23

2N2913, 15, 17, 19, 72, 74, 76, 78

*,<::’;.> —34

f=10 cqt ka~ ?<*

v’ “$ ‘?kc, BW =10 kc 2N2914, 16, 18, 20, 73, 75,’77, 79

>+:>*.’ —2

*!,‘,, 3

2N2913, 15, 17, 19, 72, 74, 76, 76

,,,,.:..,;.., ...., —3 4

IATCHING CH~~~)&RISTICS

DC Current @~@~~~~

(Ic =100 @, “~&E =5Vdc) /h **

2N2917, 18, 76, 77 bFEl FE2

. . 0.8 —1,0 —

‘a.:.. ?!, 2N2915, 16, 19, 20, 74, 75, 78, 79 0.9 .— 1,0

s+,+?,,.’..-\>’..’

Base, ,ro~? &lfferential [VBE1-VBE21

(Ic ~$~tih>’ to 1.0 mA, VCE =5Vdc) 2N2917, 18, 76, 77

?:j>;,,:$:‘ty. —_

2N2915, 16, 19, 20, 74, 75, 78, 79 10 mVdc

— — 5

t~~~ ~OO@Adc, VCE =5Vdc) 2N2917, 18, 76, 77 —_

,t,. 2N2915, 16, 19, 20, 74, 75, 78, 79, 5

—_3

A(VBE1-VBE2) _—

Base Voltige Differential Change

(Ic =100 #Adc, VCE =5Vdc, TA =-55 to +25°C) 2N2917, 18, 76, 77 mVdc

2N2915, 16, 19, 20, 74, 75, 78, 79 1.6

—_0.8

(Ic =100pAdc, VCE =5Vdc, TA =25 to 125” C) 2N2917, 18, 76, 77 —_

2N2915j 16, 19, 20, 74, 75, 78, 79 2.0

—_1.0

*Pulse Tests 300 &se., du~ cycle s2%

**The 10west ‘FE reading is taken as hFE1 for this ratio

MOTOROLA Semiconduc~or Products Inc.

BOx 955 .PHOENIX, ARIZONA 8500! ●ASUBSIDIARY OF MOTOROLA INC.

,,, ,.,.,.. ,. .s. ,., ,.,,.,., ,,,”. ,,,, DS 4522