1SS190 - Toshiba America Electronic Components, Inc.

1SS190

2007-11-01

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS190

Ultra High Speed Switching Application

z Small package : SC-59

z Low forward voltage : VF (3) = 0.92V (typ.)

z Fast reverse recovery time : trr = 1.6ns (typ.)

z Small total capacitance : CT = 2.2pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

Maximum (peak) reverse voltage VRM 85 V

Reverse voltage VR 80 V

Maximum (peak) forward current IFM 300 mA

Average forward current IO 100 mA

Surge current (10ms) IFSM 2 A

Power dissipation P 150 mW

Junction temperature Tj 125 °C

Storage temperature range Tstg −55~125 °C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics

Characteristic Symbol

Test

Circuit Test Condition Min Typ. Max Unit

VF (1) ― I

F = 1mA ― 0.61 ―

VF (2) ― I

F = 10mA ― 0.74 ―

Forward voltage

VF (3) ― I

F = 100mA ― 0.92 1.20

IR (1) ― V

R = 30V ― ― 0.1

Reverse current

IR (2) ― V

R = 80V ― ― 0.5

μA

Total capacitance CT ― V

R = 0, f = 1MHz ― 2.2 4.0 pF

Reverse recovery time trr ― I

F = 10mA (Fig.1) ― 1.6 4.0 ns

Marking

JEDEC -

JEITA SC-59

TOSHIBA 1-3G1C

Weight: 0.012g (typ.)

Unit: mm

1SS190

2007-11-01

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