2N6976 - Fairchild Semiconductor

Package

JEDEC TO-204AA

BOTTOM VIEW

Terminal Diagram

N-CHANNEL ENHANCEMENT MODE

PACKAGING AVAILABILITY

PART NUMBER PACKAGE BRAND

2N6975 TO-204AA

2N6976 TO-204AA

2N6977 TO-204AA

2N6978 TO-204AA

NOTE: When ordering, use the entire part number.

COLLECTOR

(FLANGE)

EMITTER

GATE

C

E

G

Features

• 5A, 400V and 500V

•V

CE(ON)

2V

•T

FI

1

µ

s, 0.5

µ

s

• Low On-State Voltage

• Fast Switching Speeds

• High Input Impedance

Applications

• Power Supplies

• Motor Drives

• Protection Circuits

Description

The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel

enhancement-mode insulated gate bipolar transistors (IGBTs)

designed for high-voltage, low on-dissipation applications such as

switching regulators and motor drivers. These types can be operated

directly from low-power integrated circuits.

April 1995

2N6975, 2N6976,

2N6977, 2N6978

5A, 400V and 500V N-Channel IGBTs

Absolute Maximum Ratings

T

C

= +25

o

C, Unless Otherwise Speciﬁed.

2N6975/2N6977

(Note 1)

2N6976/2N6978

(Note 1)

UNITS

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

CES

400 500 V

Collector-Gate Voltage (R

GE

= 1M

Ω

) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

CGR

400 500 V

Reverse Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

CES(REV.)

5 5 V

Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

GE

±

20

±

20 V

Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

C

5 5 A

Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

CM

10 10 A

Power Dissipation Total at T

C

= +25

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

D

100 100 W

Power Dissipation Derating T

C

> +25

o

C 0.8 0.8 W/

o

C

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . T

J

, T

STG

-55 to +150 -55 to +150

o

C

NOTE:

1. JEDEC registered value.

HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641

4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762

4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690

4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606

4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951

4,969,027

Speciﬁcations 2N6975, 2N6976, 2N6977, 2N6978

Electrical Speciﬁcations

T

C

= +25

∞

o

C, Unless Otherwise Speciﬁed

PARAMETERS SYMBOL TEST CONDITIONS

LIMITS

UNIT

S

2N6975/2N6977 2N6976/2N6978

MIN MAX MIN MAX

Collector-Emitter

Breakdown Voltage

BV

CES

l

C

= 1 mA, V

GE

= 0 400

(Note 1)

-

∞

500

(Note 1)

-V

Gate Threshold Voltage V

GE(TH)

V

GE

= V

CE

, I

C

= 1mA 2

∞

(Note 1)

4.5

(Note 1)

2

(Note 1)

4.5

∞

(Note 1)

V

Zero Gate Voltage Collector

Current

l

CES

V

CE

= 400V - 250

(Note 1)

--

µ

A

V

CE

= 500V - - - 250

(Note 1)

µ

A

T

C

= +125

o

C ----

µ

A

V

CE

= 400V -

∞

1000

(Note 1)

--

µ

A

V

CE

= 500V - - - 1000

(Note 1)

µ

A

Gate-Emitter Leakage Current I

GES

V

GE

=

±

20V, V

CE

= 0V - 100

(Note 1)

- 100

(Note 1)

ns

Reverse Collector-Emitter

Leakage Current

I

ECS

R

GE

= 0

Ω

, V

EC

= 5V - 5

(Note 1)

-5

(Note 1)

mA

Collector-Emitter On Voltage V

CE(ON)

I

C

= 5A, V

GE

= 10V - 2

(Note 1)

-2

(Note 1)

V

I

C

= 10A, V

GE

= 20V - 2.5 - 2.5 V

Gate-Emitter Plateau Voltage V

GEP

I

C

= 5A, V

CE

= 10V 3.4

(Note 1)

6.8

(Note 1)

3.4

(Note 1)

6.8

(Note 1)

V

On-State Gate Charge Q

G(ON)

I

C

= 5A, V

CE

= 10V 12

(Note 1)

25

(Note 1)

12

(Note 1)

25

(Note 1)

nC

Turn-On Delay Time t

D(ON)

I

C

= 5A

V

CE(CLP)

= 300V

L = 50

µ

H

T

J

= +125

o

C

V

GE

= 10V

R

G

= 50

Ω

50 Max ns

Rise Time t

R

50 Max ns

Turn-Off Delay Time t

D(ON)

400 Max

(Note 1)

ns

Fall Time t

FI

2N6975

2N6976

1000 Max

(Note 1)

ns

2N6977

2N6978

500 Max

(Note 1)

ns

Turn-Off

Energy Loss per Cycle

(Off Switching Dissipation=

W

OFF

x Frequency)

W

OFF

I

C

= 5A

V

CE(CLP)

= 300V

L = 50

µ

H

T

J

= +125

o

C

V

GE

= 10V

R

G

= 50

Ω

2N6975

2N6976

1000 Max

(Note 1)

µ

J

2N6977

2N6978

500 Max

(Note 1)

µ

J

Thermal Resistance

Junction-to-Case

R

θ

JC

1.25

(Note 1)

o

C/W

NOTE:

1. JEDEC registered value.

2N6975, 2N6976, 2N6977, 2N6978

Typical Performance Curves

FIGURE 1. TYPICAL NORMALIZED GATE THRESHOLD VOLTAGE

AS A FUNCTION OF JUNCTION TEMPERATURE FOR

ALL TYPES

FIGURE 2. NORMALIZED THERMAL RESPONSE

CHARACTERISTICS FOR ALL TYPES

FIGURE 3. TYPICAL TRANSFER CHARACTERISTICS FOR ALL

TYPES

FIGURE 4. TYPICAL SATURATION CHARACTERISTICS FOR

ALL TYPES

TC, JUNCTION TEMPERATURE (oC)

NORMALIZED GATE THRESHOLD

VGE = VCE

IC = 1mA

1.3

1.2

1.1

1.0

0.9

0.8

0.7

-50 0 +50 +100 +150

VOLTAGE

t, TIME (ms)

10

1.0

0.1

0.01

0.01 0.1 1.0 10 100 1000

ZθJC(t) = r(t)RθJC

D CURVES APPLY FOR POWER PULSE

TRAIN SHOWN READ TIME AT t1

TJ(PEAK) - TC = P(PEAK)ZθJC(t)

SINGLE PULSE

D = 0.05

D = 0.2

D = 0.5

EFFECTIVE TRANSIENT THERMAL

IMPEDANCE (NORMALIZED)

VGE, GATE-TO-EMITTER VOLTAGE (V)

ICE, COLLECTOR CURRENT (A)

10

7.5

5.0

2.5

0

0 2.5 7.55.0 10

PULSE TEST, VCE = 10V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

+25oC

+125oC

-40oC

TC = +25oC

VGE = +6V

VGE = +5V

VGE = +4V

VGE = +10V

VGE = +8V

VGE = +7V

10

7.5

5.0

2.5

0

012 345

VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

ICE, COLLECTOR CURRENT (A)

2N6975, 2N6976, 2N6977, 2N6978

FIGURE 5. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE

AS A FUNCTION OF COLLECTOR CURRENT FOR

ALL TYPES

FIGURE 6. CAPACITANCE AS A FUNCTION OF COLLECTOR-

TO-EMITTER VOLTAGE FOR ALL TYPES

FIGURE 7. TYPICAL INDUCTIVE SWITCHING WAVEFORMS

P

D

: ALLOWABLE DISSIPATION

P

C

: CONDUCTION DISSIPATION

FIGURE 8. MAXIMUM OPERATING FREQUENCY vs

COLLECTOR CURRENT (TYPICAL)

Typical Performance Curves (Continued)

PULSE TEST

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX VGE = 10V

ICE, COLLECTOR CURRENT (A)

VCE, COLLECTOR-TO-EMITTER ON VOLTAGE (V)

10

8

6

4

2

0

0 0.5 1.0 1.5 2.0 2.5 3.0

1200

1000

800

600

400

200

0

01020304050

VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

C, CAPACITANCE (pF)

f = 0.1MHz

CRSS

CISS

COSS

VGE

VCE

WOFF = ∫ IC * VCEdt

IC

fOP, MAXIMUM OPERATING FREQUENCY (kHz)

ICE, COLLECTOR CURRENT (A)

TC = oC100

fMAX2 = (PD - PC)/WOFF

2N6975

VGE = 10V

RG = 50Ω

RL = 300/ceΩ

L = 50µH

VCC = 300V

TJ = +150oC

fMAX1 = 0.05/tD(OFF)

140

120

100

80

60

40

20

12345678910

100

90

2N6976 2N6977

2N6978

FIGURE 9. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT

(REFER TO APPLICATION NOTES AN7254 AND AN7260)

FIGURE 10. INDUCTIVE SWITCHING TEST CIRCUIT

Typical Performance Curves (Continued)

TIME (µs)

500

375

250

125

0

10

8

6

4

0

2

IG (REF)

IG (ACT)

20

IG (REF)

IG (ACT)

80

COLLECTOR-EMITTER VOLTAGE

VCC = BVCES

GATE

EMITTER

VOLTAGE

RL = 100Ω

IG (REF) = 0.43mA

VGE = 10V

VCC = BVCES

0.75 BVCES

0.50 BVCES

0.25 BVCES

0.75 BVCES

0.50 BVCES

0.25 BVCES

VCE, COLLECTOR-EMITTER VOLTAGE (V)

VGE, GATE-EMITTER VOLTAGE (V)

20V

0V

RGEN = 100Ω

1/RG = 1/RGEN + 1/RGE

RGE = 100Ω

L = 50µH

VCC

300V

+

RL

-

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT ST A TUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

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